- Features 232-layer TLC NAND technology for reliable performance
- M.2 2280 form factor optimized for high-speed operation
- Operates efficiently in temperatures from 0°C to 70°C
- Withstands extreme storage temperatures from -40°C to 85°C
- Mean time between failures of 1,600,000 hours for longevity
Product Details
Data sheet
- Type
- Solid state drive - internal
- Dimensions (WxDxH)
- 22 mm x 80 mm x 3.5 mm
- Interface
- PCI Express 5.0 x4 (NVMe)
- Form factor
- M.2 2280
- Capacity
- 1 TB
- Features
- 232-layer TLC NAND technology, 2GB LPDDR4 DRAM cache, NVM Express (NVMe) 2.0, Phison PS5026-E26
- PRODUCT DESCRIPTION
- AORUS Gen5 14000 - SSD - 1 TB - PCI Express 5.0 x4 (NVMe)
- Manufacturer Warranty
- 5-year warranty
- NAND Flash Memory Type
- 3D triple-level cell (TLC)
- Buffer Size
- 2 GB
Quick Compare
Product |
SAMSUNG 870 QVO SSD 2TB SATA 2.5inch | TRANSCEND 128GB SSD 6.35cm IDE MLC | SSD|SAMSUNG|990 EVO|2TB|M.2|PCIe Gen4|NVMe|TLC|Write speed 4200 MBytes/sec|Read speed 5000 MBytes/sec|2.38mm|TBW 1200 TB|MZ-V9E2 | GOODRAM SSD IRDM PRO M.2 SLIM 2TB NVME |
Availability |
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Price |
€185.15
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€185.77
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€189.34
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€189.39
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Description |
The 870 QVO offers an incredible upgrade for everyday PC users who want to ramp-up their desktop PC or laptop to a larger storage without compromising on performance. | Transcend PSD is a series of 2.5 PATA SSD with high performance and advanced flash control techniques. Due to smaller size (fit the standard dimensions of 2.5" IDE hard disk drives), huge capacity, high speed, and low power consumption, solid state disk is perfect replacement storage device for PCs, laptops, gaming systems, and handheld devices. | SSD series A1000 |
The GOODRAM IRDM PRO SLIM by Wilk Elektronik represents a significant advancement in internal hard drive technology. Designed for both enthusiasts and professionals, this M.2 2280 solid state drive offers a substantial 1 TB capacity, making it perfect for extensive libraries of games, software, and high-resolution media files. Engineered for excellence, it boasts an impressive internal data rate of up to 7000 MBps read and 5500 MBps write speeds, ensuring rapid file access and efficient data transfer. The drive's resilience is highlighted by its operational temperature range, capable of functioning in extreme conditions from -25 °C to 85 °C, and its robust 700 TB SSD endurance rating ensures a long service life. Incorporating features such as Error Correction Code (ECC), Wear Level |
Type |
Solid state drive - internal | Solid state drive - internal | Solid state drive - internal | |
Dimensions (WxDxH) |
69.85 mm x 100 mm x 6.8 mm | 6.985 cm x 10.03 cm x 0.74 cm | 80 mm x 22 mm x 3.8 mm | |
Weight |
46 g | 55 g | ||
Interface |
SATA 6Gb/s | IDE/ATA | PCIe 4.0 x4 (NVMe) | |
Form factor |
2.5" | 2.5" | M.2 | M.2 2280 |
Capacity |
2 TB | 128 GB | 2 TB | |
Write speed |
4200 MBytes/sec | |||
Read speed |
5000 MBytes/sec | |||
Features |
TRIM support, Garbage Collection technology, sleep mode, TurboWrite Technology, V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667 | Shock resistant, DMA supported, Wear Leveling Support, Advanced Power Shield, Error Correction Code (ECC), S.M.A.R.T. | TRIM support, Wear Leveling Support, Error Correction Code (ECC), Thermal throttling, upgradable firmware, Bad Block Management, Over Provision, Phison PS5018-E18 controller, NVMe 1.4 | |
Garantija |
60L | |||
PRODUCT DESCRIPTION |
Samsung 870 QVO MZ-77Q2T0BW - SSD - 2 TB - SATA 6Gb/s | Transcend PSD330 - SSD - 128 GB - IDE/ATA | GOODRAM IRDM PRO SLIM - SSD - 2 TB - PCIe 4.0 x4 (NVMe) | |
Category Code |
SSU | |||
Unit Net Weight |
0.009 kg | |||
Vendor Homepage |
www.samsung.com | |||
Drive thickness |
2.38mm | |||
SSD Capacity |
2TB | |||
Dimensions |
80 x 22 x 2.38 mm | |||
SSD series |
990 EVO | |||
TBW |
1200 TB | |||
NAND flash technology |
TLC | |||
Manufacturer Warranty |
3-year warranty | 3-year warranty | 5-year warranty | |
MODEL |
MZ-V9E2T0BW | |||
Hardware Encryption |
Yes | |||
Encryption Algorithm |
256-bit AES | |||
NAND Flash Memory Type |
Quad-level cell (QLC) | Multi-level cell (MLC) | 3D triple-level cell (TLC) | |
Buffer Size |
2 GB | |||
NVMe |
Yes | |||
Interface (PCIe Gen4) |
Yes | |||