Product Details
Data sheet
- Warranty
- 60 month(s)
- Producer product name
- 990 EVO Plus
- Net weight
- 0.01 kg
- Gross weight
- 0.04 kg
- WEEE tax
- Yes
- Packing quantity
- 1.00 pc(s)
- Volume (m3)
- 0.00 m
- Tare weight (kg)
- 0.03 kg
- Gross depth (mm)
- 90.00 mm
- Gross width (mm)
- 30.00 mm
- Gross height (mm)
- 10.00 mm
- WEE classification
- CL109:6:2017-04-01
- Paper/Pasteboard
- 22.00 g
- Embeeded battery
- No
- Plastic (No PET)
- 8.00 g
- Producer product family
- SSD
- Solid-state drive capacity
- 1000 GB
- Solid-state drive interface
- NVMe
- Write speed
- 6300 MB/s
- Read speed
- 7250 MB/s
- Palette Qty
- 25641 pc(s)
- SSD form factor
- M.2 2280
- Producer
- Samsung
Quick Compare
Product |
WD Black 1TB SN8100 PCIe 5.0x4 NVMe M.2
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SSD|CRUCIAL|T710|1TB|M.2|PCIe Gen5|NVMe|Write speed 13700 MBytes/sec|Read speed 14900 MBytes/sec|TBW 600 TB|CT1000T710SSD8
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SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe
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Availability |
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Price |
€231.59
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€233.08
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€233.89
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€235.38
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Description |
The WD_BLACK SN8100 offers a robust storage solution with a capacity of 1 TB, designed to meet the demands of gamers and professionals alike. With an internal data rate of 14,900 MBps and write speeds reaching up to 11,000 MBps, this internal solid state drive ensures swift data access and transfer, enhancing overall system performance. Built on PCI Express 5.0 x4 (NVMe) interface, it supports workloads with a maximum 4KB random read of 1,600,000 IOPS and random write of 2,400,000 IOPS. Engineered for durability and longevity, the WD_BLACK SN8100 boasts a mean time between failures (MTBF) of 1,750,000 hours and an endurance rating of 600 TB, ensuring reliable performance even under intense usage. Additionally, the drive is equipped with hardware encryption using TCG Opal Encryption 2.02, p | SSD series T710 | 1TB | Form Factor M.2 | PCIe Gen5 | NVMe | Write speed 13700 MBytes/sec | Read speed 14900 MBytes/sec | TBW 600 TB | The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is pri | The SILICON POWER Xpower XS75 is designed to elevate storage performance. Featuring an internal data rate of 7000 MBps, it ensures swift data access, making it ideal for gamers and professionals. This solid state drive is built with 3D NAND technology and supports NVM Express (NVMe) 2.0, contributing to high data transfer rates and improved performance efficiency. Equipped with an integrated heatsink, the XS75 operates efficiently under demanding conditions, with a temperature range from 0°C to 70°C for operation and -40°C to 85°C for storage. Enhanced with features such as LDPC error correction and RAID readiness, this internal hard drive maintains data integrity and reliability over time, supporting a mean time between failures of 1,500,000 hours. With a compact M.2 2280 form factor, it |
Type |
Solid state drive - internal | Solid state drive - internal | Solid state drive - internal | |
Dimensions (WxDxH) |
22 mm x 80 mm x 2.38 mm | 22.15 mm x 80.15 mm x 2.38 mm | 22 mm x 80 mm x 10.8 mm | |
Weight |
7.5 g | 9 g | 33 g | |
Interface |
PCI Express 5.0 x4 (NVMe) | PCIe 5.0 x2 (NVMe) | PCIe 4.0 x4 (NVMe) | |
Form factor |
M.2 2280 | M.2 | M.2 2280 | M.2 2280 |
Capacity |
1 TB | 1 TB | 1 TB | |
Write speed |
13700 MBytes/sec | |||
Read speed |
14900 MBytes/sec | |||
Features |
DRAM cache, CMOS-bonded-array (CBA), NVMe 2.0 | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 | NVM Express (NVMe) 2.0, 3D NAND Technology, Host Memory Buffer (HMB), LDPC error correction, RAID ready | |
Garantija |
60L | |||
PRODUCT DESCRIPTION |
WD_BLACK SN8100 WDS100T1X0M-00CMT0 - SSD - 1 TB - PCI Express 5.0 x4 (NVMe) | Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe) | SILICON POWER Xpower XS75 - SSD - 1 TB - PCIe 4.0 x4 (NVMe) | |
Category Code |
SSU | |||
Vendor Homepage |
www.crucial.in/ssd/t710/CT1000T710SSD8 | |||
SSD Capacity |
1TB | |||
SSD series |
T710 | |||
TBW |
600 TB | |||
Manufacturer Warranty |
5-year warranty | 5-year warranty | 5-year warranty | |
MODEL |
CT1000T710SSD8 | |||
Hardware Encryption |
Yes | Yes | ||
Encryption Algorithm |
256-bit AES | |||
NAND Flash Memory Type |
3D triple-level cell (TLC) | Triple-level cell (TLC) | Single-level cell (SLC) | |
Integrated Heatsink |
Yes | |||
NVMe |
Yes | |||
Interface (PCIe Gen5) |
Yes | |||
Units per Shipping Box |
1 | |||
Product Net Weight |
0 kg | |||
Unit Calculated Weight |
0 kg | |||
Unit Calculated Volume |
0 cubm | |||
CnCode |
84717098 | |||