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SSD|INTENSO|MI500|2TB|M.2|NVMe|3D NAND|Write speed 4500 MBytes/sec|Read speed 5300 MBytes/sec|4mm|TBW 1200 TB|MTBF 1500000 hours
INTENSO

SSD|INTENSO|MI500|2TB|M.2|NVMe|3D NAND|Write speed 4500 MBytes/sec|Read speed 5300 MBytes/sec|4mm|TBW 1200 TB|MTBF 1500000 hours

335,27 €
240,29 € Sutaupote 94,99 €
Su mokesčiais
SSD series MI500 | 2TB | Form Factor M.2 | NVMe | Technology 3D NAND | Write speed 4500 MBytes/sec | Read speed 5300 MBytes/sec | Drive thickness 4mm | TBW 1200 TB | MTBF 1500000 hours
Kiekis

Išsaugoti prekę Pridėti į palyginimą

Can do everything. Except being slow.

When speed and reliability meet, it has to be the Intenso MI500 M.2 SSD. The SSD uses the advanced PCI Express (PCIe) Gen 4×4 NVME 1.4 protocol. The result is impressive read speeds of up to 5300 MB/s and write speeds up to 4500 MB/s (1 TB | 2 TB). With this SSD, your data transfers will be as lightning fast as they are entertaining.

Prekė detaliau

INTENSO
3836470
100 Prekės

Charakteristikos

Form factor
M.2
Write speed
4500 MBytes/sec
Read speed
5300 MBytes/sec
Garantija
24L
Category Code
SSU
Vendor Homepage
www.intenso.de/en/products/solid-state-drives/m-2-ssd-pcie-mi500/
Drive thickness
4mm
SSD Capacity
2TB
Dimensions
22 x 80 x max. 4 mm
MTBF
1500000 hours
SSD series
MI500
TBW
1200 TB
NAND flash technology
3D NAND
MODEL
3836470
NVMe
Yes
Interface (PCIe Gen4)
Yes
Units per Shipping Box
1
Product Net Weight
0.006 kg
Unit Calculated Weight
0.2 kg
Unit Calculated Volume
0.00054 cubm

Greitas palyginimas

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 Kingston SSD | NV3 | 1000 GB | SSD form factor M.2 2230 | Solid-state drive interface PCIe 4.0 x4 NVMe | Read speed 6000 MB/s | Kingston SSD | NV3 | 1000 GB | SSD form factor M.2 2230 | Solid-state drive interface PCIe 4.0 x4 NVMe | Read speed 6000 MB/s | SILICON POWER SSD US75 1TB M.2 PCIe NVMe SILICON POWER SSD US75 1TB M.2 PCIe NVMe WD Black 1TB SN8100 PCIe 5.0x4 NVMe M.2 WD Black 1TB SN8100 PCIe 5.0x4 NVMe M.2 SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe
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 Kingston SSD | NV3 | 1000 GB | SSD form factor M.2 2230 | Solid-state drive interface PCIe 4.0 x4 NVMe | Read speed 6000 MB/s | Write speed 4000 MB/s The SILICON POWER US75 solid state drive is a solution for users seeking to enhance their computing experience with faster data access, improved system responsiveness, and reliable performance. With its PCI Express 4.0 x4 (NVMe) interface, this internal hard drive achieves an internal data rate of up to 7000 MBps, making it suitable for intensive applications and multitasking.
Incorporating 3D NAND technology, the US75 not only offers increased storage capacity but also ensures efficiency and durability, extending the lifespan of the drive. It is designed to withstand a wide range of operating temperatures, from 0 °C to 70 °C, and comes with a shock acceleration operating tolerance of 1500 g, highlighting its robustness. Furthermore, with an impressive MTBF of 1,500,000 hours, users ca 		The WD_BLACK SN8100 offers a robust storage solution with a capacity of 1 TB, designed to meet the demands of gamers and professionals alike. With an internal data rate of 14,900 MBps and write speeds reaching up to 11,000 MBps, this internal solid state drive ensures swift data access and transfer, enhancing overall system performance. Built on PCI Express 5.0 x4 (NVMe) interface, it supports workloads with a maximum 4KB random read of 1,600,000 IOPS and random write of 2,400,000 IOPS. Engineered for durability and longevity, the WD_BLACK SN8100 boasts a mean time between failures (MTBF) of 1,750,000 hours and an endurance rating of 600 TB, ensuring reliable performance even under intense usage. Additionally, the drive is equipped with hardware encryption using TCG Opal Encryption 2.02, p The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is pri
Type
 Solid state drive - internal Solid state drive - internal Solid state drive - internal
Warranty
 36 month(s)
Producer product name
 NV3
Net weight
 0.00 kg
Gross weight
 0.01 kg
WEEE tax
 Yes
Packing quantity
 1.00 pc(s)
Volume (m3)
 0.00 m
Tare weight (kg)
 0.01 kg
Gross depth (mm)
 10.00 mm
Gross width (mm)
 30.00 mm
Gross height (mm)
 40.00 mm
WEE classification
 CL109:6:2017-04-01
Paper/Pasteboard
 8.00 g
Embeeded battery
 No
Dimensions (WxDxH)
 22 mm x 80 mm x 3.5 mm 22 mm x 80 mm x 2.38 mm 22.15 mm x 80.15 mm x 2.38 mm
Plastic (No PET)
 2.00 g
Weight
 8 g 7.5 g 9 g
Producer product family
 SSD
Interface
 PCIe 4.0 x4 (NVMe) PCI Express 5.0 x4 (NVMe) PCIe 5.0 x2 (NVMe)
Form factor
 M.2 2280 M.2 2280 M.2 2280
Capacity
 1 TB 1 TB 1 TB
Solid-state drive capacity
 1000 GB
Solid-state drive interface
 PCIe 4.0 x4 NVMe
Write speed
 4000 MB/s
Read speed
 6000 MB/s
Palette Qty
 72000 pc(s)
Features
 3D NAND Technology DRAM cache, CMOS-bonded-array (CBA), NVMe 2.0 Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
SSD form factor
 M.2 2230
PRODUCT DESCRIPTION
 SILICON POWER US75 - SSD - 1 TB - PCIe 4.0 x4 (NVMe) WD_BLACK SN8100 WDS100T1X0M-00CMT0 - SSD - 1 TB - PCI Express 5.0 x4 (NVMe) Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe)
Manufacturer Warranty
 5-year warranty 5-year warranty 5-year warranty
Hardware Encryption
 Yes Yes
Encryption Algorithm
 256-bit AES
NAND Flash Memory Type
 3D triple-level cell (TLC) Triple-level cell (TLC)
Producer
 Kingston

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